PART |
Description |
Maker |
IRFM210A |
Advanced Power MOSFET (200V, 1.5ohm, 0.77A)
|
FAIRCHILD[Fairchild Semiconductor]
|
IRFP250A |
200V N-Channel A-FET / Replaced by IRFP250B Advanced Power MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
IRF9610S IRF9610STRL IRF9610STRR |
-200V Single P-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-1.8A) Power MOSFET(Vdss=-200V/ Rds(on)=3.0ohm/ Id=-1.8A) CAP 3.9PF 50V /-0.1PF C0G SMD-0402 TR-7-PA SN100 HIGH-FREQ 功率MOSFET(减振钢板基本\u003d-00V,的Rds(on)\u003d 3.0ohm,身份证\u003d- 1.8A
|
IRF[International Rectifier] International Rectifier, Corp.
|
IRC630 IRC |
Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=9.0A) Power MOSFET(Vdss=200V/ Rds(on)=0.40ohm/ Id=9.0A) 200V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package
|
IRF[International Rectifier]
|
IRF9240 |
CAP CER 250VAC 100PF X7R 1808 11 A, 200 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA -11A, -200V, 0.500 Ohm, P-Channel Power MOSFET -11A -200V 0.500 Ohm P-Channel Power MOSFET 11A/ -200V/ 0.500 Ohm/ P-Channel Power MOSFET
|
Intersil, Corp. INTERSIL[Intersil Corporation]
|
SSP4N60AS SSP4N60ASJ69Z |
4 A, 600 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET Advanced Power MOSFET Advanced Power MOFET
|
FAIRCHILD SEMICONDUCTOR CORP
|
IRFP260 IRFP260N IRFP260NPBF |
200V Single N-Channel HEXFET Power MOSFET in a TO-247AC package Power MOSFET(Vdss=200V, Rds(on)=0.04ohm, Id=50A) 功率MOSFET(减振钢板基本\u003d 200V的电压,的Rdson)\u003d 0.04ohm,身份证\u003d 50A条)
|
IRF[International Rectifier] International Rectifier, Corp.
|
FQI32N20C FQB32N20C FQB32N20CTM |
200V N-Channel Advance Q-FET C-Series 200V N-Channel MOSFET 28 A, 200 V, 0.082 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
IRFW520A IRFI520A IRFWI520A IRFW520ATM |
Advanced Power MOSFET N-CHANNEL POWER MOSFET 100V N-Channel A-FET Advanced Power MOSFET 9.2 A, 100 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor, Corp.
|
IRFI620G |
Power MOSFET(Vdss=200V, Rds(on)=0.80ohm, Id=4.1A) 功率MOSFET(减振钢板基本\u003d 200V的电压,的Rds(on)\u003d 0.80ohm,身份证\u003d 4.1a的) Power MOSFET(Vdss=200V/ Rds(on)=0.80ohm/ Id=4.1A) HEXFET? Power MOSFET
|
International Rectifier, Corp. IRF[International Rectifier]
|